Acoustic phonon and surface roughness spin relaxation mechanisms in strained ultra-scaled silicon films
نویسندگان
چکیده
We consider the impact of the surface roughness and phonon induced relaxation on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space, which are responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentum relaxation time determining the electron mobility can only be increased by a factor of two.
منابع مشابه
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films
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